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APTGF180DH60
Asymmetrical - bridge NPT IGBT Power Module
VCES = 600V IC = 180A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features
* Non Punch Through (NPT) THUNDERBOLT IGBT(R)
* * *
OUT1 G1 E1 VBUS 0/VBUS
- Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
E4 G4 OUT2
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 600 220 180 630 20 833 630A @ 600V Unit V A
APTGF180DH60 - Rev 1 March, 2004
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTGF180DH60
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGE = 0V, IC = 150A Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 180A Tj = 125C VGE = VCE, IC = 2mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 180A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 180A RG = 2.5W Min
600
Typ
Max 150 3000 2.5 5 200
Unit V A V V nA Unit nF
2.0 2.2 3
Dynamic Characteristics
Min Typ 8.6 0.94 0.8 660 580 400 26 25 150 30 6.74 5.74 26 25 170 40 8.6 7 Max
nC
ns
mJ
Inductive Switching (125C) VGE = 15V VBus = 400V IC = 180A RG = 2.5W
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions
50% duty cycle
Min Tc = 80C
IF = 200A IF = 400A IF = 200A IF = 200A VR = 400V di/dt =400A/s IF = 200A VR = 400V di/dt =400A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 200 1.6 1.9 1.4 180 220 780 2900
Max 1.8
Unit A V
Qrr
Reverse Recovery Charge
nC
u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1
APT website - http://www.advancedpower.com
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APTGF180DH60 - Rev 1 March, 2004
trr
Reverse Recovery Time
ns
APTGF180DH60
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Mounting torque For terminals Package Weight IGBT Diode 2500 -40 -40 -40 3 2 150 125 100 5 3.5 280 Min Typ Max 0.15 0.32 Unit C/W V C N.m g
M6 M5
Package outline
APT website - http://www.advancedpower.com
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APTGF180DH60 - Rev 1 March, 2004
APTGF180DH60
Typical Performance Curve
Output characteristics (VGE=15V) 600 Ic, Collector Current (A) Ic, Collector Current (A) 500 400 300 TJ=125C 200 100 0 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 600 VGE, Gate to Emitter Voltage (V) 18
250s Pulse Test < 0.5% Duty cycle 250s Pulse Test < 0.5% Duty cycle
Output Characteristics (VGE=10V) 600
250s Pulse Test < 0.5% Duty cycle
TJ=-55C TJ=25C
500 400 300 200 100 0 0
TJ=-55C
TJ=25C
TJ=125C
1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 180A TJ = 25C VCE=120V VCE=300V
4
Ic, Collector Current (A)
500 400 300 200 100 0 0
16 14 12 10 8 6 4 2 0 0
VCE=480V
TJ=125C TJ=25C 1 TJ=-55C 10
23456789 VGE, Gate to Emitter Voltage (V)
100
200
300
400
500
600
700
Gate Charge (nC) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 Ic=90A
250s Pulse Test < 0.5% Duty cycle V GE = 15V
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8 10 12 14 16 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Ic=90A Ic=180A
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
Ic=360A
Ic=360A
Ic=180A
DC Collector Current vs Case Temperature
Collector to Emitter Breakdown Voltage (Normalized)
1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) Ic, DC Collector Current (A)
320
240
80
0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
APT website - http://www.advancedpower.com
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APTGF180DH60
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35 250 VGE=15V, TJ=125C Turn-Off Delay Time vs Collector Current
30 VGE = 15V 25 Tj = 25C VCE = 400V RG = 2.5 50 100 150 200 250 300
200
150 VGE=15V, TJ=25C
20
100
VCE = 400V RG = 2.5 50 100 150
15 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80 VCE = 400V RG = 2.5
50 200 250 300 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
80
VCE = 400V, VGE = 15V, RG = 2.5 tf, Fall Time (ns)
tr, Rise Time (ns)
60
60
TJ = 125C
40
VGE=15V, TJ=125C
40
20
20
TJ = 25C
0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300
0 50 100 150 200 250 I CE, Collector to Emitter Current (A) 300
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 16 Eon, Turn-On Energy Loss (mJ) 12 8 4 0 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance
VCE = 400V VGE = 15V TJ = 125C
Turn-Off Energy Loss vs Collector Current 12 10 8 6 4 2 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300 VCE = 400V VGE = 15V RG = 2.5 TJ = 125C
VCE = 400V RG = 2.5 TJ=125C, VGE=15V
TJ=25C, VGE=15V
TJ = 25C
Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) 20 16 12 8 4
Eoff, 90A Eon, 180A Eoff, 180A Eon, 90A
VCE = 400V VGE = 15V RG = 2.5
32 Switching Energy Losses (mJ)
Eon, 360A Eoff, 360A Eoff, 180A
Eon, 360A
24
Eoff, 360A
16
Eon, 180A Eoff, 90A
8
Eon, 90A
0 0 5 10 15 20 Gate Resistance (Ohms) 25
0 0 25 50 75 100 TJ, Junction Temperature (C) 125
APT website - http://www.advancedpower.com
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APTGF180DH60
Capacitance vs Collector to Emitter Voltage 100000 IC, Collector Current (A) C, Capacitance (pF) 700 600 500 400 300 200 100 0 0 10 20 30 40 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Minimum Switching Safe Operating Area
10000
Cies
1000
Coes Cres
100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.05 0.025 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.25 0.15 0.9 0.35
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60 40 20 0 40 80 120 160 200 IC, Collector Current (A) 240 VCE = 400V D = 50% RG = 2.5 TJ = 125C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF180DH60 - Rev 1 March, 2004

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